df005ma, df01ma, df02ma, df04m a, df06ma, df08ma, df10ma www.vishay.com vishay general semiconductor revision: 16-aug-13 1 document number: 88572 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 miniature glass passivated si ngle-phase bridge rectifiers features ? ul recognition, file number e54214 ? ideal for printed circuit boards ? applicable for automative insertion ? high surge current capability ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications general purpose use in ac/dc bridge full wave rectification for smps, lighting ballaster, adap ter, battery charger, home appliances, office equipment, and telecommunication applications. mechanical data case: dfm molding compound meets ul 94 v-0 flammabi lity rating ? base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked on body primary characteristics package dfm i f(av) 1 a v rrm 50 v, 100 v, 200 v, 400 v, 600 v, 800 v, 1000 v i fsm 30 a i r 5 a v f at i f = 1.0 a 1.1 v t j max. 150 c diode variations quad ~ ~ case style dfm ~ ~ maximum ratings (t a = 25 c unless otherwise noted) parameter symbol df005ma df01ma df02ma df04ma df06ma df08ma df10ma unit device marking code dfa005 dfa01 dfa02 dfa04 dfa06 dfa08 dfa10 maximum repetitive pe ak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward output rectified current at t a = 40 c i f(av) 1.0 a peak forward surge current single sine-wave superimposed on rated load i fsm 30 a rating for fusing (t < 8.3 ms) i 2 t4.5a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol df005ma df 01ma df02ma df04ma df06ma df08ma df10ma unit maximum instantaneous forward voltage drop per diode 1.0 a v f 1.1 v maximum reverse current at rated dc blocking voltage per diode t a = 25 c i r 5.0 a t a = 125 c 500 typical junction capacitance per diode 4.0 v, 1 mhz c j 25 pf
df005ma, df01ma, df02ma, df04m a, df06ma, df08ma, df10ma www.vishay.com vishay general semiconductor revision: 16-aug-13 2 document number: 88572 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) thermal resistance from junction to ambient and from junction to lead mounted on pcb with 0.5" x 0.5" (13 mm x 13 mm) copper pa ds ? ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - derating curve output rectified current fig. 2 - maximum non-repetitive peak forward surge current per diode fig. 3 - typical forward characteristics per diode fig. 4 - typical reverse leakage c haracteristics per diode thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol df005ma df01ma df02ma df04ma df06ma df08ma df10ma unit typical thermal resistance (1) r ? ja 40 c/w r ? jl 15 ordering information (example) preferred p/n unit weight (g ) preferred package code ba se quantity delivery mode df06ma-e3/45 0.403 45 50 tube 20 40 60 8 0 100 120 140 150 0 0.5 1.0 60 hz resisti v e or ind u cti v e load p. c . b . m o u nted on 0.51 x 0.51" (13 x 13 mm) copper pads w ith 0.06" (1.5 mm) lead length am b ient temperat u re (c) a v erage for w ard o u tp u t c u rrent (a) 1 10 100 0 5 10 15 20 25 30 1.0 cycle t j = 150 c single sine-wa v e nu m b er of cycles at 60 hz a v erage for w ard o u tp u t c u rrent (a) 0.4 0.6 0. 8 1.0 1.2 1.4 0.01 0.1 1 10 instantaneo u s for w ard voltage (v) instantaneo u s for w ard c u rrent (a) t j = 25 c p u lse width = 300 s 1 % d u ty cycle 0 20 40 60 8 0 100 0.01 0.1 1 10 100 percent of rated peak re v erse voltage (%) instantaneo u s re v erse c u rrent (a) t j = 125 c t j = 50 c
df005ma, df01ma, df02ma, df04m a, df06ma, df08ma, df10ma www.vishay.com vishay general semiconductor revision: 16-aug-13 3 document number: 88572 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical junction capacitance per diode fig. 6 - typical transient thermal impedance per diode ? package outline dimensions in inches (millimeters) 1 10 100 1 10 100 re v erse voltage (v) j u nction capaci tance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mvp-p 0.01 0.1 1 10 100 0.1 1 10 100 t - heating time (s) transient thermal impedance (c/w) case style dfm 0.255 (6.5) 0.245 (6.2) 0.315 ( 8 .00) 0.2 8 5 (7.24) 0.013 (0.33) 0.00 8 6 (0.22) 0.350 ( 8 .9) 0.300 (7.6) 0.075 (1.90) 0.055 (1.39) 0.205 (5.2) 0.195 (5.0) 0.0 8 0 (2.03) 0.050 (1.27) 0.1 8 5 (4.69) 0.150 (3. 8 1) 0.335 ( 8 .51) 0.320 ( 8 .12) 0.130 (3.30) 0.120 (3.05) 0.045 (1.14) 0.035 (0. 8 9) 0.023 (0.5 8 ) 0.01 8 (0.46)
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